The numerical modelling of silicon carbide high power semiconductor devices
β Scribed by A. Elford; P.A. Mawby
- Book ID
- 108361689
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 984 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0026-2692
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π SIMILAR VOLUMES
An important advantage of silicon carbide as a material for power electronics is its extremely high electric field strength. The practical use of this advantage requires the elimination of regions of high electric field concentration in the design of power devices and efficient device passivation. L
## Abstract The aim of this note is to point out that the boundary condition for the network modelling of thermal problems may have been incorrectly used in some previous studies. It is shown that the accuracy of the network analogue or the equivalent finiteβdifference method is on the par with the