State of the art of high temperature power electronics

✍ Scribed by Cyril Buttay; Dominique Planson; Bruno Allard; Dominique Bergogne; Pascal Bevilacqua; Charles Joubert; Mihai Lazar; Christian Martin; Hervé Morel; Dominique Tournier; Christophe Raynaud

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 387 KB
• Volume: 176
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2010.10.003

✦ Synopsis

High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500 • C, whereas silicon is limited to 150-200 • C. Applications such as transportation or a deep oil and gas wells drilling can benefit. A few converters operating above 200 • C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).