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The post-damage behavior of a MOS tunnel emitter transistor

✍ Scribed by S.E. Tyaginov; M.I. Vexler; A.F. Shulekin; I.V. Grekhov

Book ID
108210604
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
568 KB
Volume
46
Category
Article
ISSN
0026-2714

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πŸ“œ SIMILAR VOLUMES

Operation of a bipolar transistor with a
Operation of a bipolar transistor with a tunnel MOS emitter and an induced base from 4.2 to 300 K
✍ I.V Grekhov; K Schmalz; A.F Shulekin; K Tittelbach-Helmrich; M.I Vexler πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 296 KB

We demonstrate for the first time the capability of tunnel MOS emitter transistors to operate in the temperature range from 300 K down to 4.2 K without reduction of current gain. This device suffers much less from carrier freeze out than conventional bipolar transistors with p-n junction based emitt