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Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

โœ Scribed by Vexler, M I; Tyaginov, S E; Shulekin, A F


Book ID
121208983
Publisher
Institute of Physics
Year
2005
Tongue
English
Weight
690 KB
Volume
17
Category
Article
ISSN
0953-8984

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