Operation of a bipolar transistor with a tunnel MOS emitter and an induced base from 4.2 to 300 K
✍ Scribed by I.V Grekhov; K Schmalz; A.F Shulekin; K Tittelbach-Helmrich; M.I Vexler
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 296 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0011-2275
No coin nor oath required. For personal study only.
✦ Synopsis
We demonstrate for the first time the capability of tunnel MOS emitter transistors to operate in the temperature range from 300 K down to 4.2 K without reduction of current gain. This device suffers much less from carrier freeze out than conventional bipolar transistors with p-n junction based emitters. This is because the gain of the tunnel MOS emitter transistor relies on the asymmetry of electron/hole quantum mechanical tunneling which is almost temperature independent. The results illustrating the effect of magnetic fields of up to 9 T on the performance of this transistor are also presented. Due to its satisfactory low-temperature operation and other interesting properties, the tunnel MOS emitter transistor is a promising bipolar component for cryoelectronics.