In this paper we discuss the potential of positrons for the study of defects in the MOS system. It is shown that Doppler broadening measurements of the positron annihilation radiation reveals properties not detected by conventional techniques such as electron spin resonance measurements. Guiding the
The Positron as a Probe for Studying Bulk and Defect Properties in Semiconductors
✍ Scribed by Doz. Dr. G. Dlubek; Prof. Dr. O. Brümmer
- Publisher
- John Wiley and Sons
- Year
- 1986
- Tongue
- English
- Weight
- 603 KB
- Volume
- 498
- Category
- Article
- ISSN
- 0003-3804
No coin nor oath required. For personal study only.
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