Positron annihilation as a tool for the study of defects in the MOS system

✍ Scribed by J.M.M. de Nijs; M. Clement; H. Schut; A. van Veen

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 506 KB
• Volume: 36
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00011-7

✦ Synopsis

In this paper we discuss the potential of positrons for the study of defects in the MOS system. It is shown that Doppler broadening measurements of the positron annihilation radiation reveals properties not detected by conventional techniques such as electron spin resonance measurements. Guiding the positrons towards the Si/SiO2 interface constitutes an advantageous approach for studying the properties of this region. Examples of the correlation between technologically affected electrically active defect centers and positron annihilation data are discussed. We also briefly deal with the extension of the technique to provide more detailed information using lifetime, correlation and two-dimensional angular correlation annihilation radiation measurements.