✦ LIBER ✦

The Physics of Semiconductors Volume 263 || Electronic Defect States

✍ Scribed by ,

Book ID: 111651192
Publisher: Springer Berlin Heidelberg
Year: 2006
Weight: 895 KB
Category: Article
ISBN: 354025370X
DOI: 10.1007/3-540-34661-9_7

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Defect states in group-V amorphous semic

Defect states in group-V amorphous semiconductors

✍ Elliott, S R; Davis, E A 📂 Article 📅 1979 🏛 Institute of Physics 🌐 English ⚖ 896 KB

[Topics in Applied Physics] Theory of De

[Topics in Applied Physics] Theory of Defects in Semiconductors Volume 104 || The Calculation of Free-Energiesin Semiconductors: Defects, Transitionsand Phase Diagrams

✍ Drabold, David A.; Estreicher, Stefan K. 📂 Article 📅 2006 🏛 Springer Berlin Heidelberg ⚖ 511 KB

Electronic behaviors of the gap states i

Electronic behaviors of the gap states in amorphous semiconductors

✍ H. Okamoto; Y. Hamakawa 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 464 KB

[Topics in Applied Physics] Theory of De

[Topics in Applied Physics] Theory of Defects in Semiconductors Volume 104 || Quantum Monte Carlo Techniques and Defects in Semiconductors

✍ Drabold, David A.; Estreicher, Stefan K. 📂 Article 📅 2006 🏛 Springer Berlin Heidelberg ⚖ 432 KB

Electronic states of selected deep level

Electronic states of selected deep level defects in III–V semiconductors

✍ L.A. Hemstreet 📂 Article 📅 1983 🏛 Elsevier Science ⚖ 339 KB

Defect physics of the CuInSe2 chalcopyri

Defect physics of the CuInSe2 chalcopyrite semiconductor

✍ C. Rincón; R. Márquez 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 109 KB

The activation energies of acceptor E A and donor levels E D in the chalcopyrite compound CuInSe 2 are calculated by using a simpler model based in the effective-mass theory for the case of single, double and triple point defect centers. Despite of the simplicity of this model, it is found that the