Defect physics of the CuInSe2 chalcopyrite semiconductor

✍ Scribed by C. Rincón; R. Márquez

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 109 KB
• Volume: 60
• Category: Article
• ISSN: 0022-3697
• DOI: 10.1016/s0022-3697(99)00190-0

✦ Synopsis

The activation energies of acceptor E A and donor levels E D in the chalcopyrite compound CuInSe 2 are calculated by using a simpler model based in the effective-mass theory for the case of single, double and triple point defect centers. Despite of the simplicity of this model, it is found that the values of E A and E D thus calculated for shallow and deep levels are in reasonable agreement with those reported from the experimental data. In the case of not shallow donor levels values of E D in good agreement with these data are calculated by using the free electron mass m 0 instead of the effective electron mass. From the analysis of the results, most of these levels have been identified as due to the presence of several native point defects.