The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers
โ Scribed by Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M
- Book ID
- 121483610
- Publisher
- Institute of Physics
- Year
- 2006
- Tongue
- English
- Weight
- 427 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0957-4484
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๐ SIMILAR VOLUMES
In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL i
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum