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The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

โœ Scribed by Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M


Book ID
121483610
Publisher
Institute of Physics
Year
2006
Tongue
English
Weight
427 KB
Volume
17
Category
Article
ISSN
0957-4484

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We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum