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Temperature dependent and time-resolved photoluminescence studies of InAs self-assembled quantum dots with InGaAs strain reducing layer structure

โœ Scribed by Kong, Lingmin; Feng, Zhe Chuan; Wu, Zhengyun; Lu, Weijie


Book ID
125953211
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
583 KB
Volume
106
Category
Article
ISSN
0021-8979

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Abnormal temperature dependence of photo
โœ Z.Y. Zhang; C.L. Yang; Y.Q. Wei; X.L. Ye; P. Jin; Ch.M. Li; X.Q. Meng; B. Xu; Z. ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 289 KB

In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL i