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The photoluminescence characterization of the N-doped ZnO films produced by wet chemical deposition

โœ Scribed by Zhao, Yue; Peng, Xiang; Li, Zhao; Zhou, Mingtao; Liang, Xiaoyan; Wang, Jian; Min, Jiahua; Wang, Linjun; Shi, Weimin

Book ID
113035087
Publisher
Springer
Year
2012
Tongue
English
Weight
425 KB
Volume
107
Category
Article
ISSN
1432-0630

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Photoluminescence properties of nitrogen
Photoluminescence properties of nitrogen-doped ZnO films deposited on ZnO single crystal substrates by the plasma-assisted reactive evaporation method
โœ A. Nakagawa; F. Masuoka; S. Chiba; H. Endo; K. Megro; Y. Kashiwaba; T. Ojima; K. ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 411 KB

Photoluminescence (PL) spectra of nitrogen-doped ZnO films (ZnO:N films) grown epitaxially on n-type ZnO single crystal substrates by using the plasma-assisted reactive evaporation method were measured at 5 K. In PL spectra, free exciton emission at about 3.375 eV was very strong and emissions at 3.