Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition
โ Scribed by Y. Terai; K. Yamaoka; K. Yoshida; T. Tsuji; Y. Fujiwara
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 161 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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๐ SIMILAR VOLUMES
Photoluminescence (PL) spectra of nitrogen-doped ZnO films (ZnO:N films) grown epitaxially on n-type ZnO single crystal substrates by using the plasma-assisted reactive evaporation method were measured at 5 K. In PL spectra, free exciton emission at about 3.375 eV was very strong and emissions at 3.
Transparent conductive dysprosium doped ZnO (Dy:ZnO) thin films with preferential orientation in the (0 0 0 2) direction were deposited on (0 0 0 1) sapphire substrate by buffer assisted pulsed laser deposition. The experimental results show that the resistivity of Dy:ZnO thin films decreased to a m