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The nucleation centers formed during bias-enhanced nucleation of diamond on iridium: structure and stability

✍ Scribed by Gsell, S.; Schreck, M.; Bauer, T.; Karl, H.; Thorwarth, G.; Bergmaier, A.; Dollinger, G.; Stritzker, B.


Book ID
123304265
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
697 KB
Volume
14
Category
Article
ISSN
0925-9635

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Pulsed bias-enhanced nucleation of highly oriented diamond on (100) silicon is reported. A square waveform substrate bias was implemented in this investigation employing a pulse ON bias voltage of --250 V and a pulse OFF bias voltage of 0 V. An evaluation of the pulse ON fractions of 0.17 and 0.50 r