✦ LIBER ✦

The N5-4 high-frequency voltage calibrator

✍ Scribed by M. L. Gurevich; A. V. Gorshkov

Book ID: 106465409
Publisher: Springer US
Year: 2008
Tongue: English
Weight: 337 KB
Volume: 51
Category: Article
ISSN: 0543-1972
DOI: 10.1007/s11018-008-9032-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-frequency and microwave power and v

High-frequency and microwave power and voltage calibrators

✍ A. V. Myl'nikov; T. I. Petrova; V. G. Chuiko 📂 Article 📅 1997 🏛 Springer US 🌐 English ⚖ 230 KB

Voltage (power) calibrator for the frequ

Voltage (power) calibrator for the frequency range to 1000 MHz

✍ V. S. Buzinov; Yu. V. Druzhilovskii 📂 Article 📅 1968 🏛 Springer US 🌐 English ⚖ 190 KB

Calibration of uniform-field spark-gaps

Calibration of uniform-field spark-gaps for high-voltage measurement at power frequencies

✍ Bruce, F.M. 📂 Article 📅 1947 🏛 Institution of Electrical Engineers ⚖ 263 KB

Photoassisted high-frequency capacitance

Photoassisted high-frequency capacitance-voltage characterization of the Si[sub 3]N[sub 4]/GaN interface

✍ Swenson, B. L.; Mishra, U. K. 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 741 KB

Photoassisted high-frequency capacitance

Photoassisted high-frequency capacitance-voltage characterization of the Si[sub 3]N[sub 4]/GaN interface

✍ Swenson, B. L.; Mishra, U. K. 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 741 KB

A revised method to measure the interface state density of Si3N4/GaN metal-insulator-semiconductor diodes is reported. The wide band gap of GaN suppresses hole generation at room temperature and consequently allows measurements in deep depletion. Using the method outlined in this paper, the total in

High frequency low voltage CMOS diode

✍ Ramirez-Angulo, J. 📂 Article 📅 1992 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 277 KB