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The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen

✍ Scribed by L. Dobos; L. Tóth; B. Pécz; Z.E. Horváth; A.L. Tóth; B. Beaumont; Z. Bougrioua

Book ID
113797838
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
605 KB
Volume
90
Category
Article
ISSN
0167-9317

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Electrical and microstructural properties of low-resistance Ti/Re/Au ohmic contacts to n-type GaN
✍ Rajagopal Reddy, V. ;Choi, Chel-Jong 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 473 KB

## Abstract The microstructural and electrical properties of Ti/Re/Au (10 nm/10 nm/50 nm) ohmic contacts to moderately doped n‐type GaN (4.0 × 10^18^ cm^–3^) have been investigated by current–voltage (__I__ –__V__), Auger electron microscopy (AES) and transmission electron microscopy (TEM). The ele