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The mechanism of plasma-induced deposition of amorphous silicon from silane

✍ Scribed by S. Vepřek; M. Heintze


Publisher
Springer
Year
1990
Tongue
English
Weight
968 KB
Volume
10
Category
Article
ISSN
0272-4324

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We have investigated the mechanism of silicon thin film deposition by ArF excimer laser irradiation of silane gas diluted with argon. The Si films were deposited by a focused laser beam irradiating in parallel to silicon and silicon dioxide substrates at a gas flow rate of 20 SCCM, total pressure of