We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the
β¦ LIBER β¦
The Low-Field Electron Mobility in Bulk AlGaN
β Scribed by Ridley, B. K.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 128 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0031-8965
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