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The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111)

✍ Scribed by M.Horn-von Hoegen; M. Pook; A. Al Falou; B.H. Müller; M. Henzler


Publisher
Elsevier Science
Year
1993
Weight
75 KB
Volume
284
Category
Article
ISSN
0167-2584

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In situ investigation by GISAXS and GIXD
✍ M.-I. Richard; T.-U. Schülli; E. Wintersberger; G. Renaud; G. Bauer 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 272 KB

The growth mode, strain state and shape of Ge islands were analyzed in situ, during their growth on Si(0 0 1), by combining grazing incidence small angle X-ray scattering (GISAXS) and X-ray diffraction (GIXD) measurements. GISAXS measurements provide the detailed evolution of the shape of the grown