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Effects of exchange-correlation and surface strain on the subband separations in Si(111) surface inversion layers

✍ Scribed by K.S. Yi; J.J. Quinn


Publisher
Elsevier Science
Year
1982
Weight
47 KB
Volume
113
Category
Article
ISSN
0167-2584

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Effect of strain on the electronic struc
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We have used the recursion method to calculate bulk and surface electronic structures of a (GaP)l/(InP)l (111) strained-layer superlattice. The obtained energy gap for the stable superlattice is 1.88eV. which is smaller by 0.31eV than the average of the gaps of bulk GaP(2.9leV) and InP(1.48eV). We s