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The interface reaction of high-k La2Hf2O7/Si thin film grown by pulsed laser deposition

โœ Scribed by Xuerui Cheng; Zeming Qi; Guobin Zhang; Yonghu Chen; Tingting Li; Guoqiang Pan; Min Yin


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
282 KB
Volume
256
Category
Article
ISSN
0169-4332

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Epitaxial La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3ร€d (LSCF) thin films have been grown successfully on single crystal LaAlO 3 substrate by pulsed laser deposition (PLD). AFM micrographs have shown a rms roughness of 5 A for the 550 C deposited films. The films further exhibited electrical conductivities of a