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The interface between sputter-deposited gold thin films and ion-bombarded sapphire substrates

โœ Scribed by J.W. Park; A.J. Pedraza; W.R. Allen


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
928 KB
Volume
103
Category
Article
ISSN
0169-4332

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Beta iron disilicide (b-FeSi 2 ) is one of the candidate materials for a compound semiconductor, which is promising for optoelectronic devices. b-FeSi 2 film has been obtained by ion beam sputter deposition (IBSD) on Si(1 0 0) substrates that are pre-treated by sputter etching by Ne + . In the prese