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The influence of various dielectric parameters on the reststrahlen region of SiC

✍ Scribed by J.A.A. Engelbrecht; I.J. van Rooyen


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
333 KB
Volume
406
Category
Article
ISSN
0921-4526

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✦ Synopsis


The reststrahlen region of SiC is analysed with the goal of establishing the origin of different shapes of this band, by varying the dielectric parameters involved when simulating the reststrahlen region as obtained by infrared reflectance.


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