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Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial films

✍ Scribed by Alexander A. Lebedev; Pavel L. Abramov; Sergey P. Lebedev; Gagik A. Oganesyan; Alla S. Tregubova; Dmitrii V. Shamshur

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 367 KB
Volume: 404
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2009.08.183

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