The influence of plasma power on the tem
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S. Fricke; A. Friedberger; U. Schmid
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Article
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2009
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Elsevier Science
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English
β 354 KB
Aluminum oxide (Al 2 O 3 ) thin films are synthesized by reactive d.c. magnetron sputter deposition on silicon substrates. The impact of varying plasma power P p (i.e. 400 to 1000 W) and of thin film temperatures T up to 540 Β°C on the electrical performance are evaluated, as these dielectric layers