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The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition

โœ Scribed by H. Wang; S.L. Li; H. Xiong; Z.H. Wu; J.N. Dai; Y. Tian; Y.-Y. Fang; C.Q. Chen

Publisher
Springer US
Year
2011
Tongue
English
Weight
550 KB
Volume
41
Category
Article
ISSN
0361-5235

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## Abstract We have deposited indium oxide (In~2~O~3~) films on silicon substrates by the metal organic chemical vapor deposition (MOCVD). We have investigated the effect of substrate temperature on growth and structural properties of films in the range of 200โ€“300 ยฐC. The films had a preferred orie