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The influence of Se doping upon the phase change characteristics of GeSb2Te4

✍ Scribed by Jan Tomforde; Saskia Buller; Marscha Ried; Wolfgang Bensch; Daniel Wamwangi; Markus Heidelmann; Matthias Wuttig

Book ID
113913636
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
440 KB
Volume
11
Category
Article
ISSN
1293-2558

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In this paper, we propose an advanced material device with a new structure in order to overcome a problem of high programming currents that the conventional phase-change random access memory (PRAM) device, Ge 2 Sb 2 Te 5 PRAM device, currently has. To minimize set/reset currents, a cell structure ha