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Characteristic improvement of Ge1Se1Te2 phase change memory by the heating method and the device structure change

✍ Scribed by Hyuk Choi; Hyun-Koo Kim; Sang-Mo Koo; Hong-Bay Chung

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
245 KB
Volume
84
Category
Article
ISSN
0167-9317

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✦ Synopsis

In this paper, we propose an advanced material device with a new structure in order to overcome a problem of high programming currents that the conventional phase-change random access memory (PRAM) device, Ge 2 Sb 2 Te 5 PRAM device, currently has. To minimize set/reset currents, a cell structure has to be optimized by a proper device process. We have investigated a phase transition behaviors with experiments under structural change. As a result, we have observed that the programming voltage and the writing current of Ge 1 Se 1 Te 2 material are preferable than those of Ge 2 Sb 2 Te 5 material. It is known that phase change properties of Ge 1 Se 1 Te 2 materials vary depending on the presence of heater electrode layers. We found out that it is effective to use a multi-layer structure (Ge 2 Sb 2 Te 5 layer inserted into Ge 1 Se 1 Te 2 layer) in order to reduce the programming voltage. The multi-layered device showed improved performance than single-layered Ge 1 Se 1 Te 2 PRAM device.

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