On the Temperature Dependence of Hole Mo
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M. Asche; J. Von Borzeskowski
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Article
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1970
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John Wiley and Sons
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English
β 286 KB
## Abstract The influence of the nonβparabolicity of the valence band on the hole mobility in Si is investigated. The numerical and experimental results can be fitted if for the holes the nonβparabolicity of the energy spectrum as well as their scattering on acoustic and optical phonons are taken i