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The influence of oxygen on the concentration dependence of electron mobility in silicon

✍ Scribed by Litovchenko, P. C. ;Lutsyak, V. S. ;Kirnas, I. G. ;Kurilo, P. M. ;Nitsovich, V. M.


Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
396 KB
Volume
21
Category
Article
ISSN
0031-8965

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## Abstract The influence of the non‐parabolicity of the valence band on the hole mobility in Si is investigated. The numerical and experimental results can be fitted if for the holes the non‐parabolicity of the energy spectrum as well as their scattering on acoustic and optical phonons are taken i