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The influence of oxide/nitride surface layers on diffusion in Si and SiGe

✍ Scribed by N.R. Zangenberg; J. Chevallier; J.L. Hansen; A Nylandsted Larsen


Publisher
Springer
Year
2005
Tongue
English
Weight
663 KB
Volume
81
Category
Article
ISSN
1432-0630

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Cathodoluminescence (CL) spectroscopy and CL imaging have been used to characterize misfit dislocations in as-grown Si/SiGe epilayers and those contaminated with transition metal. The misfit dislocations in the as-grown layers showed no radiative recombination (D bands) but only the band exciton fea