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The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy

✍ Scribed by T. C. Fu; N. Newman; E. Jones; J. S. Chan; X. Liu; M. D. Rubin; N. W. Cheung; E. R. Weber

Book ID: 112817034
Publisher: Springer US
Year: 1995
Tongue: English
Weight: 689 KB
Volume: 24
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02659683

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