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The influence of mobile ions on the Si/SiO2 interface traps: M. W. Hillen and D.G. Hemmes. Solid-St. Electron. 24 (8) 773 (1981)

Publisher: Elsevier Science
Year: 1982
Tongue: English
Weight: 111 KB
Volume: 22
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(82)90156-1

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