The influence of low copper doping concentrations on the recrystallization process in and the electrical properties of germanium in Ge:Cu thin film transistors

✍ Scribed by J. Doutreloigne; J. De Baets; I. De Rycke; H. De Smet; A. Van Calster; J. Vanfleteren

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 891 KB
• Volume: 189
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(90)90452-j