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The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors

✍ Scribed by I. Lazanu; S. Lazanu

Book ID
114166470
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
294 KB
Volume
201
Category
Article
ISSN
0168-583X

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## Abstract The origin of the lower minority carrier lifetime in the border region of multicrystalline silicon (mc‐Si) ingots was investigated. Based on minority carrier lifetime measurements and chemical analyses, distributions of defects and impurities were studied. It is found that the content o