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The influence of crystal growth conditions on the physical properties of CsI

✍ Scribed by M. Hartmanová; A. A. Urusovskaya; F. Hanic; E. Šebestová


Book ID
112571979
Publisher
Springer
Year
1981
Tongue
English
Weight
752 KB
Volume
31
Category
Article
ISSN
0011-4626

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## Abstract A model of Ge incorporation into CdTe lattice based on the analysis of temperature influence of post‐growth crystal annealing on CdTe:Ge electric properties is proposed. Ge impurity is mainly placed in Te sublattice in crystals fast cooled from high temperatures. Ge~Te~ defect is an acc