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The influence of growth conditions on the electrical properties of CdSe crystals

✍ Scribed by Baubinas, R. ;Januškevičius, Z. ;Petrėtis, B. ;Sakalas, A. ;Viščakas, J.

Publisher
John Wiley and Sons
Year
1973
Tongue
English
Weight
822 KB
Volume
15
Category
Article
ISSN
0031-8965

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## Abstract A model of Ge incorporation into CdTe lattice based on the analysis of temperature influence of post‐growth crystal annealing on CdTe:Ge electric properties is proposed. Ge impurity is mainly placed in Te sublattice in crystals fast cooled from high temperatures. Ge~Te~ defect is an acc