Influence of growth temperature conditions on electric properties of CdTe:Ge crystals

✍ Scribed by Ye. Nikonyuk; Z. Zakharuk; A. Rarenko; Ye. Rybak; M. Kuchma; Vya. Shlyakhoviy; P. Fochuk

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 134 KB
• Volume: 3
• Category: Article
• ISSN: 1862-6351
• DOI: 10.1002/pssc.200564666

✦ Synopsis

Abstract

A model of Ge incorporation into CdTe lattice based on the analysis of temperature influence of post‐growth crystal annealing on CdTe:Ge electric properties is proposed. Ge impurity is mainly placed in Te sublattice in crystals fast cooled from high temperatures. Ge~Te~ defect is an acceptor defining the electric and photoelectric properties at T ≤ 290 K. Ge~Cd~ donors and deep (Ge~Cd~V~Cd~)^/^ acceptors are generated in lesser amount. Long‐term ingot thermal treatment at T < 1090 K causes germanium atom relocalization chiefly into cadmium sublattice. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)