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The influence of AlxGa1−xN intermediate buffer layer on the characteristics of GaN/Si(1 1 1) epitaxy

✍ Scribed by Seong-Hwan Jang; Seong-Suk Lee; Oh-Yeon Lee; Cheul-Ro Lee

Book ID: 108341952
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 534 KB
Volume: 255
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(03)01251-x

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The influence of AlxGa1−xN intermediate buffer layer on the characteristics of GaN/Si(1&#xa0;1&#xa0;1) epitaxy

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