✦ LIBER ✦

The impact of intrinsic device fluctuations on CMOS SRAM cell stability

✍ Scribed by Bhavnagarwala, A.J.; Xinghai Tang; Meindl, J.D.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Impact of extrinsic and intrinsic parame

✍ Bowman, K.A.; Xinghai Tang; Eble, J.C.; Menldl, J.D. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 218 KB

The impact of gate-oxide breakdown on SR

✍ R. Rodriguez; J. Stathis; B. Linder; S. Kowalczyk; C. Chuang; R. Joshi; G. North 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 194 KB

Impact of RDF and RTS on the performance

✍ Vinícius V. A. Camargo; Nabil Ashraf; Lucas Brusamarello; Dragica Vasileska; Gil 📂 Article 📅 2010 🏛 Springer 🌐 English ⚖ 449 KB

The impact of device scaling on the curr

✍ Ming-Horn Tsai; Tso-Ping Ma 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 819 KB

Impact of NBTI Aging on the Single-Event

✍ Bagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro; Faccio, Federico 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 222 KB

The impact of process-induced mechanical

✍ Alam, Naushad; Anand, Bulusu; Dasgupta, S. 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 465 KB