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The hydrogenated amorphous silicon reach-through avalanche photodiodes (a-Si:H RAPDs)

✍ Scribed by Hong, J.-W.; Chen, Y.-W.; Laih, W.-L.; Fang, Y.-K.; Chang, C.-Y.; Gong, C.


Book ID
117868195
Publisher
IEEE
Year
1990
Tongue
English
Weight
581 KB
Volume
26
Category
Article
ISSN
0018-9197

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## Abstract We have investigated the distribution of H atoms around native dangling bonds in a‐Si:H by electron‐nuclear double resonance (ENDOR). In contrast to previous electron spin echo envelope modulation (ESEEM) studies [Isoya et al., Phys. Rev. B **47**(12), 7013–7024 (1993)] we find that the