Growth of large diameter necks is of great importance for 300 mm silicon single crystals. Tensile tests for necks with different diameter have been made, and then the fracture morphology of the necks has been analyzed by scanning electron microscopy (SEM). The surface morphology demonstrates that th
โฆ LIBER โฆ
The growth technology for 300 mm single crystal silicon
โ Scribed by H Tu; Q Zhou; G Zhang; J Wang; Q Chang; F Qin; F Fang; Z Wu; G Wan
- Book ID
- 108411150
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 127 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0167-9317
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