๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Growth and stress analysis of necks for 300 mm CZ silicon single crystals

โœ Scribed by H. Tu; J. Cheng; Q. Chang; Q. Zhou; J. Wang; G. Zhang; F. Fang


Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
249 KB
Volume
56
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

โœฆ Synopsis


Growth of large diameter necks is of great importance for 300 mm silicon single crystals. Tensile tests for necks with different diameter have been made, and then the fracture morphology of the necks has been analyzed by scanning electron microscopy (SEM). The surface morphology demonstrates that the fracture is fragile. The large seeds can support crystals grown from large charge sizes of poly-silicon. It is indicated that the neck growth conditions have certain effects on the tensile stress limit of the necks. The fracture mechanism of necks has been discussed in the paper.


๐Ÿ“œ SIMILAR VOLUMES


Challenges for economical growth of high
โœ Erich Tomzig; Wilfried von Ammon; Erich Dornberger; Ulrich Lambert; Werner Zuleh ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 911 KB

The changeover from 200 mm to 300 mm is required by the semiconductor industry due to the necessity for larger chip sizes and demand for decreasing cost. However, the cost for 300 mm crystal growth is likely to rise owing to larger puller, enlargement of hot zone, expensive silica crucibles and long