The growth of GaN on lithium gallate (LiGaO2) substrates for material integration
β Scribed by April S. Brown; W. Alan Doolittle; Sangbeom Kang; Jeng-Jung Shen; Z. L. Wang; Z. Dai
- Book ID
- 107452523
- Publisher
- Springer US
- Year
- 2000
- Tongue
- English
- Weight
- 423 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0361-5235
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The growth and material properties of GaN heteroepitaxial layers on vicinal (1 0 0) and exact (1 1 1)B substrates have been investigated, using molecular beam epitaxy (MBE) with N 2 RF-plasma source. We examined the approach to grow GaN directly on the oxide desorbed GaAs, without the incidence of a