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The formation of porous silicon by chemical stain etches

✍ Scribed by M.I.J. Beale; J.D. Benjamin; M.J. Uren; N.G. Chew; A.G. Cullis

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
871 KB
Volume
75
Category
Article
ISSN
0022-0248

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We have fabricated porous silicon layers (PSLs) in the anodizing solution, HF(48wt.\%): \(\mathrm{H}_{2} \mathrm{O}=1: 1\). After anodization, the PSL was etched in the same chemical solution as used for anodization and then illuminated with the \(476.5 \mathrm{~nm}\) line, with a power of \(20 \mat