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The evolution of hydrogen molecule formation in hydrogen-plasma-treated Czochralski silicon

✍ Scribed by R. Job; A.G. Ulyashin; W.R. Fahrner

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
222 KB
Volume
4
Category
Article
ISSN
1369-8001

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Transmission electron microscopy (TEM) and atomic force microscopy (AFM) are used to study the temperature evolution of hydrogen plasma induced defects in silicon. Hydrogen plasma treated n-and p-doped Czochralski silicon samples were annealed at temperatures between 200 and 1000 Β°C for up to 10 h i