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The Energy Dependence of Lattice Disorder in Ion-Implanted Silicon

โœ Scribed by D. A. Marsden; G. R. Bellavance; J. A. Davies; M. Martini; P. Sigmund


Publisher
John Wiley and Sons
Year
1969
Tongue
English
Weight
454 KB
Volume
35
Category
Article
ISSN
0370-1972

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Implantation angle dependent study of va
โœ M.D.H. Lay; J.C. McCallum; C. Jagadish ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 205 KB

The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V 2 ร€ ) in n-type 0.7-1.1 O cm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 10 twists from the [1 1 0] direction and va