๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The energy band alignment of Si nanocrystals in SiO2

โœ Scribed by Seguini, G.; Schamm-Chardon, S.; Pellegrino, P.; Perego, M.


Book ID
121513637
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
486 KB
Volume
99
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Band alignment of HfO2 on SiO2/Si struct
โœ Wang, Xiaolei; Han, Kai; Wang, Wenwu; Xiang, Jinjuan; Yang, Hong; Zhang, Jing; M ๐Ÿ“‚ Article ๐Ÿ“… 2012 ๐Ÿ› American Institute of Physics ๐ŸŒ English โš– 755 KB
The peculiarities of Si/SiO2 interfaces
โœ T. Kryshtab; G. Gรณmez Gasga; N. Korsunska; M. Baran; S. Kirillova; L. Khomenkova ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 281 KB

Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp

Direct evidence of self-aligned Si nanoc
โœ Lars Rรถntzsch; Karl-Heinz Heinig; Bernd Schmidt; Arndt Mรผcklich; Wolfhard Mรถller ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 203 KB

## Abstract Energyโ€filtered transmission electron microscopy proves directly that ion irradiation and postโ€irradiation annealing of a Si/SiO~2~ interface results in the formation of a narrow layer of monodisperse Si nanocrystals in the oxide at a tunnel distance from the interface. Position and siz