The energy band alignment of Si nanocrystals in SiO2
โ Scribed by Seguini, G.; Schamm-Chardon, S.; Pellegrino, P.; Perego, M.
- Book ID
- 121513637
- Publisher
- American Institute of Physics
- Year
- 2011
- Tongue
- English
- Weight
- 486 KB
- Volume
- 99
- Category
- Article
- ISSN
- 0003-6951
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๐ SIMILAR VOLUMES
Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp
## Abstract Energyโfiltered transmission electron microscopy proves directly that ion irradiation and postโirradiation annealing of a Si/SiO~2~ interface results in the formation of a narrow layer of monodisperse Si nanocrystals in the oxide at a tunnel distance from the interface. Position and siz