𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The electronic structure of a quantum well under an applied electric field

✍ Scribed by H. Sari; Y. Ergün; İ. Sökmen; M. Tomak

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
283 KB
Volume
20
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

✦ Synopsis

The effects of an applied electric field on quantum well subband energies are calculated variationally within the effective mass approximation for model potential profiles. The concept of a quasi-bound state is examined critically. For higher electric field values it is shown that the quasi-bound state approximation for the ground and first excited state of the electron, and for the ground state of the hole is valid.

1996 Academic Press Limited

SM ARTICLE 766

📜 SIMILAR VOLUMES

Photoluminescence of n-i-n GaAs/AlAs sin
Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias
✍ L.J Olafsen; T Daniels-Race; R.E Kendall; S.W Teitsworth 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 215 KB

GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applied electric field and temperature ranging fro

Valence-band structure and optical absor
Valence-band structure and optical absorption inp-type GaAs–Al0.3Ga0.7As multi-quantum-well infrared photodetectors under an electric field
✍ R. Melliti; P. Tronc; E. Mao; A. Majerfeld; J. Depeyrot 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 218 KB

Hole structure of a GaAs-Al 0.3 Ga 0.7 As p-type multiple quantum well (MQW) subjected to an electric field parallel to the growth axis is studied using the envelope-function approximation and taking into account the valence subband mixing. The system considered in this work consists of five GaAs we

Subband and excitonic binding of graded
Subband and excitonic binding of graded GaAs/Ga1–xAlxAs quantum wells under an electric field
✍ H. Sari; Y. Ergün; S. Elagöz; E. Kasapo ǧ; İ Sökmen; M. Tomak 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 124 KB

The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The very sensitive dependence of subband energies on the applied field is calculated using a model potential profi