✦ LIBER ✦

Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias

✍ Scribed by L.J Olafsen; T Daniels-Race; R.E Kendall; S.W Teitsworth

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 215 KB
Volume: 27
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1999.0818

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✦ Synopsis

GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applied electric field and temperature ranging from 23 to 180 K and current-voltage measurements are presented for two MBE-grown structures clad with Si-doped Al 0.45 Ga 0.55 As layers on n + -GaAs [100] substrates. The large and field-dependent energy separation between type-I and type-II luminescence peaks is understood to arise from the build-up of electrons at the X point in the AlAs barrier.

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