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The electrical properties of sulfur-passivated and rapidly thermally annealed GaAs metal-oxide-semiconductor structures with the oxide layer grown anodically

✍ Scribed by G. Eftekhari


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
492 KB
Volume
248
Category
Article
ISSN
0040-6090

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## Abstract The title compounds are characterized by powder XRD, magnetic susceptibility, specific heat, and electrical resistivity measurements.